CVD furnace (SiC、BN)

Description

The CVD Furnace is engineered for high-performance chemical vapor deposition processes, primarily used for anti-oxidation coatings, matrix material transformation, and other advanced material treatments. Utilizing a silane (silicohydride) gas source, it enables precise and uniform deposition of Silicon Carbide (SiC), Boron Nitride (BN), and other protective layers. This furnace is available in both horizontal and vertical structures to suit different production setups. Ideal for aerospace, semiconductor, and advanced ceramics industries, the system ensures excellent coating adhesion, improved thermal stability, and extended component lifespan under extreme conditions.

Technical Details

Description
ModelSMC-HTE-060609SMC-HTE-101015SMC-HTE-121220
Working Zone Size (W × H × L) (mm)600 × 600 × 9001000 × 1000 × 15001200×1200×2000
Max. Temperature (°C)150015001500
Temperature Uniformity (°C)±7.5±7.5±10
Ultimate Vacuum (Pa)1-1001-1001-100
Pressure Increase Rate (Pa/h)0.670.670.67